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| inchange semiconductor product specification silicon npn power transistors buw13 BUW13A description ? with to-3pn package ? high voltage,high speed applications ? converters ? inverters ? switching regulators ? motor control systems pinning (see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit buw13 850 v cbo collector-base voltage BUW13A open emitter 1000 v buw13 400 v ceo collector-emitter voltage BUW13A open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 15 a i cm collector current-peak 30 a i b base current 6 a i bm base current-peak 9 a p t total power dissipation t c =25 ?? 175 w t j junction temperature 150 ?? t stg storage temperature -65~175 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors buw13 BUW13A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit buw13 400 v ceo(sus) collector-emitter sustaining voltage BUW13A i c =0.1a ; i b =0; l=25mh 450 v buw13 i c =10a; i b =2a v cesat collector-emitter saturation voltage BUW13A i c =8a; i b =1.6a 1.5 v buw13 i c =10a; i b =2a v besat base-emitter saturation voltage BUW13A i c =8a; i b =1.6a 1.6 v i ces collector cut-off current v ce =rated v ces ; v be =0 tc=125 ?? 1.0 4.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =20ma ; v ce =5v 10 35 h fe-2 dc current gain i c =1.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 | s t s storage time 4.0 | s t f fall time for buw13 i c =10a ;i b1 =-i b2 =2a for BUW13A i c =8a ;i b1 =-i b2 =1.6a 0.8 | s inchange semiconductor product specification 3 silicon npn power transistors buw13 BUW13A package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10mm) |
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